منابع مشابه
Boron-doped diamond: Investigation of the stability of surface-doping versus bulk-doping using cyclic cluster model calculations
Boron-doped bulk diamond and the boron-doped hydrogen terminated (001) surface of diamond were investigated using the cyclic cluster model. Structure and stability of the hydrogen-terminated (001) surface were calculated and compared with experimental and other theoretical results from the literature. Boron-doping was modeled by substitution of a carbon atom by a boron atom in different positio...
متن کاملComputational studies of elementary steps relating to boron doping during diamond chemical vapour deposition.
Density functional theory-based electronic structure computations on small models of the diamond {100} surface have enabled prediction of the energetics and activation parameters of a number of plausible mechanistic steps for boron incorporation into, and boron loss from, the growing diamond surface. Initial proving calculations for the carbon-only case show, as in previous work, that the rate-...
متن کاملSuperconductivity in boron-doped diamond.
Superconductivity of boron-doped diamond, reported recently at T(c)=4 K, is investigated exploiting its electronic and vibrational analogies to MgB2. The deformation potential of the hole states arising from the C-C bond-stretch mode is 60% larger than the corresponding quantity in MgB2 that drives its high T(c), leading to very large electron-phonon matrix elements. The calculated coupling str...
متن کاملDependence of boron incorporation in delta layers on CVD diamond growth process and misorientation angle
Diamond is a promising material for the next generation of high-power and high-frequency semiconductor devices. In terms of its physical properties: high carrier saturation velocity (2.7·10 cm/s), high electron and hole mobility at low doping level, and record thermal conductivity, diamond significantly exceeds other semiconductor materials. Diamond is a wide-band gap semiconductor/insulator (b...
متن کاملSelecting boron fullerenes by cage-doping mechanisms.
So far, no boron fullerenes were synthesized: more compact sp(3)-bonded clusters are energetically preferred. To circumvent this, metallic clusters have been suggested by Pochet et al. [Phys. Rev. B 83, 081403(R) (2011)] as "seeds" for a possible synthesis which would topologically protect the sp(2) sector of the configuration space. In this paper, we identify a basic pentagonal unit which allo...
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ژورنال
عنوان ژورنال: physica status solidi (RRL) - Rapid Research Letters
سال: 2016
ISSN: 1862-6254
DOI: 10.1002/pssr.201600329